Power diode: structure and principle is simple, the work is reliable; thyristor: withstand voltage and current capacity of all devices in the highest
IGBT switching high speed, low switching loss, with high pulse current impact, state low pressure drop, high input impedance, voltage drive, small driving power; disadvantages: switch speed is lower than the power MOSFET, voltage and current capacity than GTO
GTR: high voltage, large current, good switching characteristics, high current capacity, low saturation voltage; shortcomings: low switching speed, for the current drive, the required driving power, the driving circuit is complex, there are two breakdown problems.
GTO: voltage, large current capacity is in the circumstance of high power, with conductivity modulation effect through the flow ability is very strong; disadvantages: current turn off the gain is very small, shutdown gate negative pulse current, switching speed low, large driving power, the complexity of driving circuit, the switching frequency is low
MOSFET: fast switching speed, high input impedance, good thermal stability, small driving power and driving circuit is simple, high working frequency, there is no second breakdown problem; disadvantages: small current capacity, low pressure, generally apply only in power does not exceed 10kW power electronic device.
Constraints: voltage, current capacity, the speed of the switch.