Power electronic devices are being developed in the direction of high power, high frequency and integration. 80's thyristor current capacity has reached 6000, blocking voltage up to 6500 volts. But the operating frequency of these devices is low. To improve its operating frequency, it depends on how to speed up the recombination velocity of minority carriers in the base area (or less) and to extract more carriers from the gate electrode. Reducing the lifetime of the minority carrier can effectively shorten the off current, but lead to the increase of the forward voltage drop. So it is necessary to take into account the speed of conversion and the power loss of the device. In 80, the maximum operating frequency of these devices is below 10 kHz. Bipolar power transistor can work at a frequency of 100 kHz, the control current capacity has reached several hundred amperes, blocking voltage 1000 volts, but to maintain state than other controllable power devices require greater base drive current. Due to the existence of thermal excitation two breakdown phenomenon, limiting its anti surge capacity. To further improve its operating frequency is still affected by the base area and the small sub storage effect of the collector region. Single pole type MOS power field effect transistor developed in the 70's, because of the limitation of the few sub storage effect, can work at the frequency of more than. The device of the conduction current has a negative temperature characteristic, it is not easy to appear thermal excitation of the second breakdown phenomenon; current capacity needs to be expanded, the device simple parallel, and has a good linearity output characteristics and small driving power; in the manufacturing process for large-scale integrated. But it has a large pressure drop, and the consistency of the material and device technology is higher. To the 80's, the current capacity of only tens of thousands of late, blocking voltage of nearly a thousand volts.
From the 60's to the early 70's, the power electronic devices, which are represented by the semi - controlled common thyristor, are mainly used for phase control circuit. The circuit is widely used in electrolysis, electroplating, DC motor, generator excitation rectifier device. Compared with the traditional mercury arc rectifier device, has the advantages of small volume, reliable work, and achieved obvious energy-saving effect (general can save power by 10 to 40%, from the reality of China and for fan and pump load accounts for about the power of a third, if the AC motor variable speed drive, average saving more than 20%, the annual saving 400 billion KWH), so the development of power electronic technology attracts more and more people's attention. In the 70's, the full control type can turn off thyristor and power transistor, fast switching speed, simple control, reverse turn off thyristor is more compatible with the function of thyristor and fast rectifier diode. They push the application of power electronic technology to the new field of inverter and chopper. These devices have been widely used in power electronic devices such as frequency control, switching power supply, static frequency conversion and so on.
The MOS power field effect transistor and power integrated circuit appear in the early 80's, the operating frequency of the power integrated circuit. The technology of integrated circuit promotes the miniaturization and functionality of the device. These new achievements provide the conditions for the development of high frequency power electronics technology, and promote the development of power electronic devices in the direction of intelligent, high frequency.
Developed in the eighties of the electrostatic induction thyratron tube, insulated gate transistor, and combination of various devices, thyristor, power MOS field effect transistor and the power transistor respective advantages, in performance and new development. For example, the isolation gate transistor, which has the characteristics of MOS power field effect transistor gate control, and has the current conduction performance of bipolar power transistors, which allows the current density than bipolar power transistors several times higher. Electrostatic induction thyratron tube preserved the advantage of thyristor turn-on voltage drop, structure to avoid the general thyristor gate trigger must be in the gate around the pilot and then gradually extends transverse to the process, so than the general thyristor tube has higher switching speed, and the allowable junction temperature also than ordinary thyratron tube. These new devices meet the requirements of power electronics in a higher frequency range.
A power integrated circuit is defined as a set of multiple devices and a control circuit on a chip. The manufacturing process not only summarizes the experience of the first generation of power electronic devices to the large current and high voltage development process, but also integrates the process characteristics of the large scale integrated circuit. The device due to greatly reduce the volume of the device and its control circuit, which can effectively reduce when the device is in the high frequency parasitic effects, which improves the circuit working frequency and suppression of interference is very important.
In 2014, the United States together with the Obama government investment in NCSU The was founded in Next Generation Power Electronics Institute , the development of a new generation of wide band gap power semiconductor devices. [返回]